Cr2＋：ZnSe中红外激光晶体生长及光谱性能

Growth and Spectral Properties of Cr^(2+)∶ZnSe Crystals for Mid-infrared Lasers

采用物理气相输运法(PVT),以Cr2+∶ZnSe多晶为原料,在源区温度约为1000℃、温差为6～7℃条件下生长2周,获得了体积约为0.7 cm3的Cr2+∶ZnSe晶体。紫外-可见-近红外透过光谱显示,Cr2+∶ZnSe样品在1770 nm左右出现了强吸收;Cr2+浓度在1019atoms/cm3数量级,与原料中Cr2+浓度基本一致,反映了较低温度PVT法生长有利于获得预期的Cr2+掺杂浓度。荧光测试结果表明,Cr2+∶ZnSe样品谱线对称性好,发射峰位约在2400 nm,线宽约600 nm;室温荧光寿命为5.52×10-6s。数据分析结果表明,Cr2+∶ZnSe样品的吸收截面和发射截面峰值分别为1.1×10-18 cm2和2.3×10-18 cm2。

Abstract： Cr^2＋ ： ZnSe crystal with a volume of about 0.7 cm^3 was grown through PVT method, in which a temperature difference of 6-7℃ between the source and growth ends at about 1000℃ was applied for two weeks. The UV-VIS-NIR transmittance spectrum shows that there is a strong absorption peak at thewavelength of about 1770 nm. The calculated Cr^2＋-doping concentration is around 10^19 atoms/cm^3, which agrees well with that in the starting materials. The expecting Cr^2＋-doping concentration is obtained at a relatively low temperature by PVT method. The fluorescence emission spectra of Cr^2＋ ： ZnSe sample displays a strong emission peak at -2400 nm with a well symmetric shape and a FWHM of - 600 nm. The room temperature emission lifetime is 5.52×10^-6 s. The results of data analysis indicates that the cross sections of absorption and emission of Cr^2 ＋ ： ZnSe sample are1.1×10^18cm.and2.3×10^18cm^2, respectively.