摘要
阐述了目前常用的3大类基片材料,即塑料基、金属基和陶瓷基材料,比较了3类材料的性能,得出了陶瓷基材料是综合性能较好的基片材料的结论,并比较了目前陶瓷基片材料中的Al2O3、AlN、BeO、SiC的性能,认为SiC作为基片材料具有良好的发展前景;针对单相SiC陶瓷固有脆性导致难以大尺寸成型的问题,提出了使用C/SiC复合材料制备基片材料的可能性,并综述了C/SiC复合材料的制备工艺,比较了3种工艺(PIP、CVI、LSI)所制备的材料的性能,认为液相渗硅(LSI)C/SiC复合材料制备大尺寸封装基片材料是未来最具前景的发展方向。
Three kinds of common board materials （plastic, metal and ceramics） are stated and their properties are compared. Ceramics is thought to have well comprehensive properties. The properties of Alz 03, A1N, BeO, SiC ce- ramics board materials are discussed and the SiC ceramics is deemed to have a favorable prospect. Because of the brittleness of monolithic SiC ceramics, C/SiC composites have the possibility to prepare board material of large size. Three kinds of manufacturing process （PIP, CVI, LSI） and their properties of C/SiC composite as-fabricated are men tioned and compared. The liquid silicon infiltration （LSI） is thought to be the most potential candidate to manufacture large size board materials in the future.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2012年第1期20-23,共4页
Materials Reports
基金
国防科技预研基金(9140c820301)
