极薄氧化物/6H-SiC结构的电学和光学性质研究

On electrical and optical properties of very thin oxide/6H-SiC structures

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摘要研究了湿化学法(120℃硝酸氧化,还有低温湿法氧化过程和高温退火组合)制备的极薄氧化物/6H-SiC结构的电学和光学性质。用深能阶暂态光谱学(电荷版)分析了电界面性质,用傅里叶变换衰减全反射红外光谱考察了极薄氧化物/6H-SiC结构的光学性质。发现界面缺陷结构的强转换依赖于应用的技术条件。 The study deals with electrical and optical properties of very thin oxide/6H-SiC structures prepared by wet chemical manner-nitric acid oxidation at 120 ℃ and also by combination of low temperature wet oxidation process and higher temperature annealing.For analysis of electrical interface properties,charge version of deep level transient spectroscopy was used.Optical properties of very thin oxide/6H-SiC structures were investigated by fourier transform infrared spectroscopy-attenuated total reflection.Strong transformations of interface defect structure were recognized in dependence on applied technological conditions.

作者 Pincik E Kobayashi H Madani M Rusnak J Takahashi M Mikula M Brunner R

机构地区斯洛伐克科学院物理研究所 Dubravska cesta 科学与工业研究所化学、食品技术和应用光化学系

出处《冶金分析》 CAS CSCD 北大核心 2011年第12期15-20,共6页 Metallurgical Analysis

基金日本学术振兴会(JSPS)和下述斯洛伐克基金会:APVV-项目编号0577/07 VEGA-项目编号2/0123/09对本研究提供的支持。

关键词碳化硅 MOS 硝酸氧化傅里叶变换红外光谱深能阶瞬态光谱 silicon carbide MOS nitric acid oxidation fourier transform infrared spectroscopy deep level transient spectroscopy

分类号 O472 [理学—半导体物理]

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2011年第12期

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极薄氧化物/6H-SiC结构的电学和光学性质研究

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