摘要
本文建立了一种新的IGBT三维热模型并运用基于有限元法的分析软件ANSYS软件对其热分布进行了模拟分析。结果表明由于单元的热耦合作用,原包间距在10um时比较合适;在相同的功率(P=1W)条件下,材料热导率随温度的变化导致器件的温度升高了4.8K;当焊料层存在空洞的情况下,器件的温度分布发生了明显的变化,比没有空洞情况下器件的上表面温度上升了24.9K。
A novel IGBT 3 - D thermal model is implemented. The thermal distribution is simulated and analyzed by using the Finite Element Method - based analytical software ANSYS. Simulation results show that thermal coupling aggravate the self - heating .of the device, it is becoming to select 10um distance between cells, Temperature dependent thermal conductivity of Si was. considered during simulation, the results indicate the peak temperature rise 4.8K in the same power（P = 1W）. When the die attach exists the void, the temperature distribution of IGBT is brought more changes, the surface temperature increase 24.9K in contrast with no void of the die attach.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2011年第6期555-558,共4页
Journal of Functional Materials and Devices
关键词
IGBT热模型
热分布
仿真
焊料层
IGBT thermal model
thermal distribution
simulation
die attach
