四结太阳能电池InGaP/GaAs/GaInAsN/Ge的设计与模拟

The design and simulation of four-junction solar cell InGaP/GaAs/GaInAsN/Ge

随着多结太阳能电池技术的发展,追求更高效率的四结太阳能电池结构InGaP/GaAs(InGaAs)/(新材料)/Ge受到广泛的研究。四元化合物材料Ga_(1-x)In_xAs_(1-y)N_y通过控制其组分比例,其禁带宽度可以调整为0.95ev-1.05ev,并且可以与GaAs,Ge实现晶格匹配,是应用于新一代太阳能电池最有潜力的新材料。在本文中我们设计了新一代多结太阳能电池InGaP/GaAs/GaInAsN/Ge,并首次应用Apsys软件对其电特性进行了模拟,与传统的InGaP/GaAs/Ge结构进行对比。结果显示,该结构可以获得较高的转换效率。

With the development of the multi - junction solar cell technology, four - junction InGaP/GaAs （InGaAs）/（ New material）/Ge solar cells are a widely -pursued route toward higher efficiencies. Quaternary compound material Ga1-xInxAs1-yNy has the ability to achieve a bandgap of 0.95 -1.05eV, furthermore, with an optical composition it is lattice -matched to GaAs and Ge, which is the most promising next- generation solar cells material. In the paper, We have designed and simulated the InGaP/GaAs/ GaInAsN/Ge solar cell structure with the software Apsys for the first time. Compared with the traditional structure InGaP/GaAs/Ge, InGaP/GaAs/GaInAsN/Ge achieve a higher conversion efficiency.