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Cu_2ZnSnS_4薄膜及其太阳电池的研究进展 被引量:6

Research Progresses on Cu_2ZnSnS_4 Film and Related Solar Cells
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摘要 Cu2ZnSnS4(CZTS)薄膜材料成本低廉且无毒,其电学性能主要由自身所含的缺陷决定,一般呈p型导电性。CZTS的禁带宽度为1.5eV左右,在可见光范围内的光学吸收系数一般都大于104 cm-1,所以其非常适合作为太阳电池的吸收层。经过国内外学者10余年的努力,CZTS太阳电池光电转换效率提升明显。相信不久的将来,CZTS薄膜电池必将得到广泛的应用。主要介绍了CZTS材料的制备方法、CZTS材料性能和CZTS太阳电池的研究进展。 Cu2ZnSnS4 (CZTS) film, generally showing P-type conductivity, is inexpensive and nontoxic, and its electrical properties are determined by the defects contained in itself. With the band gap energy about 1.5 eV and the absorption coefficient higher than 10^4 cm^-1 in visible light region, CZTS film is appropriate for the absorber layer of solar cells. The Conversion efficiency of CZTS solar cells has been greatly improved in the latest ten years at home and abroad. In this paper, the research progresses on the preparation methods, property and solar cells of CZTS materials are reviewed.
作者 江丰 沈鸿烈
出处 《半导体光电》 CAS CSCD 北大核心 2011年第6期756-761,796,共7页 Semiconductor Optoelectronics
基金 国家"863"计划项目(2006AA03Z219) 江苏高校优势学科建设工程资助项目
关键词 CZTS 制备方法 太阳电池 研究进展 CZTS preparation method solar cell research progress
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