摘要
重点讨论了像元尺寸为11μm×11μm的4096×4096元可见光CCD全帧转移结构和技术性能参数的设计,采用CCD埋沟工艺和辐射加固技术,研制出了高性能4096×4096元可见光CCD。结果表明器件动态范围达到75dB,读出噪声电子数为30,暗电流产生率为2mV/s,响应非均匀性为2%,非线性为0.4%,且具有抗γ射线辐射能力。
Full frame transfer CCD with the pixel size of 11 μm× 11 μm and active pixel of 4096 (H)~ 4096 (V)was fabricated by adopting CCD buried channel and radiation hardness technique. Tests results indicate the dynamic range of the device reaches 75 dB, and such features as read noise electrons of 30e--, dark-current generation rate of 2 mV/s, light response non- uniformity of 2.0 %, non-linearity of 0.4 % and y-ray radiation tolerance are obtained.
出处
《半导体光电》
CAS
CSCD
北大核心
2011年第6期762-764,共3页
Semiconductor Optoelectronics
基金
国家核高基重大专项支持课题
关键词
全帧转移CCD设计与研制
测试结果
full frame transfer charge-coupled device(CCD)
design and fabrication
test results