摘要
Bi2Te3薄膜是室温下热电性能最好的热电材料,利用磁控溅射在长有一薄层SiO2的n型硅样品上制备Bi/Te多层复合薄膜,经后续退火处理生成Bi2Te3。通过分析Bi2Te3薄膜的生长和退火工艺,探讨Bi/Te中Te的原子数分数对薄膜热电性能的影响。采用XRD和SEM对薄膜的结构、形貌和成分进行分析,并测量不同条件下的Seebeck系数。薄膜Seebeck系数均为负数,表明所制备样品是n型半导体薄膜,且最大值达到-76.81μV.K-1;电阻率ρ随Te的原子数分数增大而增大,其趋势先缓慢后迅速。Bi2Te3薄膜的热电性能良好,Te的原子数分数是60.52%时,功率因子最大,为1.765×10-4W.K-2.m-1。
Bi2 Te3 thin films are thermoelectric materials, which have the best thermoelectric properties at room temperature. Bi/Te muhilayer films were prepared on SiO2/Si suhstrates by magnetron sputtering, which can generate Bi2 Te3 films with the subsequent annealing. The Te contents of the Bi2Te3 films as a function of thermoelectric performance were investigated. The structures, morphology and composition of films were characterized by X-ray diffraction, field emission scanning electron microscope, and measure the Seeheck coefficient under different conditions. Seeheck coefficient of thin films were negative, which indicate that the prepared samples were all n-type semiconductor films, and the maximum Seebeck coefficient was -76.81uV · K-1. The resistivity p increased with Te content, the trend was slow at first than quick. Bi2Te3 thin films have good performance. The maximum power factor of the thin films is 1. 765 × 10 ^-4W · K^-2 . m^-1 when Te atomic percentage content is 60.52%.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第2期126-129,134,共5页
Semiconductor Technology
关键词
热电材料
Bi2Te3薄膜
磁控溅射
退火
热电性能
thermoelectric materials
Bi2Te3 thin films
magnetron sputtering
annealing
thermoelectric properties
