期刊文献+

铯钨系统离子源的研制

Research and Manufacture of Cesium-tungsten Ion Source
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摘要 在光电阴极制备及对其作表面分析时,铯离子源较中性铯源有一定的优点。根据表 面电离的原理,我们研制了多孔钨铯离子源。利用微机对整个离子源的空间、轴上电位 分布及离子运动轨迹进行了计算。在适当的电极电压条件下,对离子呈弱散焦作用,这 是符合制造光电阴极所要求的。本文报告了测量结果。 At present, the cesium source used for manufacture of photocathode belongs to a neutral source which shows some advantages. Because of low ionizable energy, cesium atom easily releases an electron to become an ion. According to the surface ionization principle, the cesium--tungsten system at high temperature behaves high ionization efficiency.The cesium--ion source that we manufactured is consisted of ion emitting electrode, control electrode and ion draw electrodes. The ion emitting electrode is a porous tungsten welded to an end of nickel tube which holds cesium-chromate and Zr-Al agent. By a microcomputer we calculate the potential distribution of ion optic lens and ion TRAJ in the space. The paper gave the experimental measuring results for the cesium-ion source.
出处 《真空》 CAS 北大核心 1990年第3期6-10,共5页 Vacuum
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