Si(100)预结构基底对Si雕塑薄膜三维模拟生长的影响

Effect of Pre-structured Substrate on Sculptured Thin Film Growth of Si on Si(100)

建立一个雕塑薄膜三维生长的蒙特卡罗模型,模拟在PVD方法下Si在Si(100)基底上沉积的生长,考虑周期性排列预结构基底的阴影效应,模拟不同预结构单元宽度、间距及不同入射角度下斜柱状雕塑薄膜的三维形貌。结果表明,在入射角和宽度一定时,存在一个最佳间宽比值使得薄膜表面粗糙度最小;当宽度大于一定数值,粗糙度随间宽比值增大而增大。在相同预结构基底下,随入射角增大,薄膜的表面粗糙度增大;而薄膜的相对密度曲线变得平缓均匀。

A three-dimensional Monte Carlo model for simulating sculptured thin-film growth of Si on Si（100） was presented.Basing on the PVD experimental condition and considering the shadow effect of periodical substrate,we simulated the topographies on the substrates with different seed widths（d）,different distances between two nearest seeds（S）,and different incident angles.The results reveal that at a given seed width and deposition angle,there is an optimum ratio of S/d which makes the surface roughness minimum.When seed width is greater than a certain value the surface roughness increases with the increase of the ratio.At a given periodical substrate,as the incident angle increases,the surface roughness increases,and the relative density curve becomes flatter.