Cu基Al掺杂ZnO多层薄膜的生长及其性能

Growth and Properties of Cu-based Al-doped ZnO Multilayer Films

本文采用直流磁控溅射技术在玻璃衬底上制备了AZO/Cu、Cu/AZO和AZO/Cu/AZO三种复合结构多层膜,研究了生长温度对多层膜特性的影响,发现AZO/Cu双层薄膜具有最优的光电性能,其最佳生长温度为100~150℃。文中进一步考察了生长温度对AZO/Cu双层薄膜结构性能和表面形貌的影响,结果表明：合适的生长温度有利于改善AZO/Cu双层薄膜的晶体质量,进而提高其光电性能;150℃下沉积的薄膜具有最佳品质因子1.11×10-2Ω-1,此时方块电阻为8.99Ω/sq,可见光透过率为80%,近红外反射率约70%。本文在较低温度下制备的AZO/Cu双层膜具有较优的透明导电性和良好的近红外反射性,可以广泛应用于镀膜玻璃、太阳能电池、平板显示器等光电领域。

Al-doped ZnO/Cu（AZO/Cu） bi-layer,Cu/AZO bi-layer,and AZO/Cu/AZO tri-layer films were prepared on glass substrates by DC magnetron sputtering at different temperatures.Comparative study of electrical and optical properties reveal that AZO/Cu bi-layer film is superior in photoelectric properties to other two kinds of multilayer films,with an optimum growth temperature in the 100-150℃ range.Effects of growth temperature on the structural property and surface morphology of AZO/Cu bi-layer films were further investigated.Moderate growth temperatures could lead to high crystal quality of the films,and therefore improve the photoelectric properties.AZO/Cu bi-layer films grown at 150℃ have the highest figure of merit of 1.11×10-2 Ω-1,with a low sheet resistance of 8.99 Ω/sq,high visible transmittance of 80%,and near infrared reflectance of about 70%.Combination of good transparent-conductive property,excellent near-infrared reflectivity,and low-temperature deposition enable the AZO/Cu bi-layer films to be widely used in various fields such as coated glasses,solar cells,and flat panel displays.