期刊文献+

Improved spectral characteristics of 980 nm broad area slotted Fabry-Perot diode lasers 被引量:1

Improved spectral characteristics of 980 nm broad area slotted Fabry-Perot diode lasers
原文传递
导出
摘要 A novel broad area slotted Fabry-Perot diode laser is designed and fabricated. Using a new semi- analytical method, we introduce effective refractive index perturbations in the form of etched slot features into a conventional 980 nm broad area Fabry-Perot cavity, and the spectral characteristics of the device are expected to be noticeably improved. A low density of slot features is formed by using standard optical lithography and inductively coupled plasma dry etching. The experimental results show that the full spectral width at half-maximum is less than 0.4 rim, meanwhile, the thermal shift of the emission spectrum is decreased from 0.26 to 0.07 nm/℃ over a temperature range of 10 to 60℃. The improved spectral characteristics of the device are proved to be attributed to such slotted Fabry-Perot laser structures. A novel broad area slotted Fabry-Perot diode laser is designed and fabricated. Using a new semi- analytical method, we introduce effective refractive index perturbations in the form of etched slot features into a conventional 980 nm broad area Fabry-Perot cavity, and the spectral characteristics of the device are expected to be noticeably improved. A low density of slot features is formed by using standard optical lithography and inductively coupled plasma dry etching. The experimental results show that the full spectral width at half-maximum is less than 0.4 rim, meanwhile, the thermal shift of the emission spectrum is decreased from 0.26 to 0.07 nm/℃ over a temperature range of 10 to 60℃. The improved spectral characteristics of the device are proved to be attributed to such slotted Fabry-Perot laser structures.
作者 Gao Zhuo Wang Jun Xiong Cong Liu Yluanyuan Liu Suping Ma Xiaoyu 高卓;王俊;熊聪;刘媛媛;刘素平;马骁宇(Institute of Semiconductors Chinese Academy of Sciences,Beijing 100083,China)
出处 《Journal of Semiconductors》 EI CAS CSCD 2012年第1期68-71,共4页 半导体学报(英文版)
基金 Project supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(No.ISCAS2008T12)
关键词 broad area diode lasers slot features spectral width wavelength stabilization broad area diode lasers slot features spectral width wavelength stabilization
  • 相关文献

参考文献9

  • 1Sverdlov B, Mohrdiek S, Pawlik S, et al. Emission wavelength stabilization in broad area lasers coupled to fiber Bragg gratings. Proc SPIE, 2008, 6876: 68761H.
  • 2Kozlowski D A, Young J S, England J M C, et al. Singlemode1.3 m Fabry-Perot lasers by mode suppression. Electron Lett, 1995, 31(8): 648.
  • 3Corbett B, McDonald D. Single longitudinal mode ridge wave- guide 1.3 m Fabry-Perot laser by modal perturbation. Electron Lett, 1995, 31(25): 2181.
  • 4Patcell J, Jones D, Kelly B, et al. Specifying the wavelength and temperature tuning range of a Fabry-Perot laser containing re- fractive index perturbations. Proc SPIE, 2005, 5825:1.
  • 5Corbett B, Percival C, Lambkin P. Multiwavelength array of single-frequency stabilized Fabry-Perot lasers. IEEE J Quantum Electron, 2005, 40(4): 490.
  • 6O'Brien S, O'Reilly E P. Theory of improved spectral purity in index patterned Fabry-Perot lasers. Appl Phys Lett, 2005, 86: 201101.
  • 7Hays D C, Cho H, Lee J W, et al. High selectivity inductively cou- pled plasma etching of GaAs over InGaE Appl Surf Sci, 2000, 156:76.
  • 8Baek I K, Lim W T, Lee J W, et al. Comparison of dry etching of A1GaAs and InGaP in a planar inductively coupled BC13 plasma. J Vac Sci Technol B, 2003, 21(6): 2487.
  • 9Hobson W S, Chen Y K, Wu M C. InGaAs/A1GaAs ridge wave- guide lasers utilizing an InGaP etch-stop layer. Semicond Sci Technol, 1992, 7:1425.

同被引文献3

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部