Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN Schottky barrier diodes （SBDs）. Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts （Rs） was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AIGaN/AIN/GaN SBDs and the AlGaN/AlN/GaN HFETs.