大功率IGBT模块并联均流特性研究

Research on Even Flow of High-power IGBT Module in Parallel

大功率IGBT并联运行能够承受更高的负载电流,但是大功率IGBT并联设计时需要考虑静、动态均流问题。PSpice仿真分析表明,影响静态均流的主要因素是IGBT模块的饱和导通压降和集电极、发射极引线的等值电阻;影响动态均流的主要因素涉及驱动电路、IGBT器件参数和主电路布局。提出了IGBT并联均流的措施,分析了IGBT并联电路设计的关键点,并通过仿真分析验证了所提出方法的可行性。

The higher load current can be withstood when the high-power IGBT running in parallel. But the even flow problems of static and dynamic state require consideration when designing high-power IGBT in parallel. By PSpice simulation, the main factors affecting the static even flow are found, which include saturation voltage drop, collector and emitter＇s lead equivalent resistance of IGBT module. The main factors affecting the dynamic even flow involve drive circuit, IGBT device parameters and main circuit layout. The solution of IGBT even flow in parallel is proposed. The key points of IGBT parallel circuit design are analyzed. By simulation, the feasibility of the proposed method is verified.