摘要
垂直地排列的高密度和硅 nanowire (SiNW ) 穿的高方面比率用一个模板和催化蚀刻进程在 Si 底层上被制作了。模板从聚苯乙烯(PS ) 被形成有直径 3050 nm 和密度 1010/cm2 的 nanospheres，由包含 PS 块共聚物的 nanophase 分离生产了。SiNWs 的长度被与 12.5 nm/s 的蚀刻的率改变蚀刻的时间控制。SiNWs 与一个高方面有 biomimetic 结构比率(100 ) ，高密度，和展览极端低的反射。约 0.1% 的极端低的反射比 750 nm 长为 SiNWs 被完成。排列得好的 SiNW/poly (3,4-ethylenedioxy-thiophene ): poly (styrenesulfonate )(PEDOT : PSS ) 异质接面太阳能电池被制作。n 类型硅 nanowire 表面遵守了 PEDOT : 通过一个简单、有效的答案过程形成核心鞘异质接面结构的 PSS。SiNWs 的大表面区域保证了 photogenerated 搬运人的有效收集。没有 nanowire 结构，比作平面房间， SiNW/PEDOT : PSS 异质接面太阳能电池从 0.4% ～ 5.7% 在功率变换效率从 2.35 mA/cm2 在电线走火电流密度展出了增加到 21.1 mA/cm2 和改进。
High density vertically aligned and high aspect ratio silicon nanowire （SiNW） arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene （PS） nanospheres with diameter 30-50 nm and density 10^10/cm^2, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio （-100）, high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly（3,4-ethylenedioxy-thiophene）：poly（styrenesulfonate） （PEDOT：PSS） heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT：PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT：PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/cm^2 to 21.1 mA/cm^2 and improvement in power conversion efficiency from 0.4% to 5.7%.
