摘要
We demonstrate a simple and controllable way to synthesize large-area, few-layer graphene on iron substrates by an optimized chemical vapor deposition （CVD） method using a mixture of methane and hydrogen. Based on an analysis of the Fe-C phase diagram, a suitable procedure for the successful synthesis of graphene on Fe surfaces was designed. An appropriate temperature and cooling process were found to be very important in the synthesis of highly crystalline few-layer graphene. Graphene-based field-effect transistor （FET） devices were fabricated using the resulting few-layer graphene, and showed good quality with extracted mobilities of 300-1150 cm2/（V.s）.
我们表明一个简单、可控制的方法综合大区域，由优化化学蒸汽免职(CVD ) 的铁底层上的很少层 graphene 用甲烷和氢的混合物的方法。基于 Fe-C 阶段图的分析，为 Fe 表面上的 graphene 的成功的合成的一个合适的过程被设计。适当温度和冷却过程被发现在高度水晶的很少层 graphene 的合成很重要。基于 Graphene 的地效果晶体管(联邦货物税) 设备用产生很少层 graphene 被制作，并且与 3001150 cm2/ 的提取活动性显示出好质量(V 敢椠 ?? 敤瑢吗？
