摘要
A novel silicon-on-insulator （SOI） high-voltage device based on epitaxy-separation by implantation oxygen （SIMOX） with a partial buried n＋-layer silicon-on-insulator （PBN SOI） is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumu- lated on the interface between top silicon layer and buried oxide layer （BOX） effectively enhance the electric field of the BOX （EI）, resulting in a high breakdown voltage （BV） for the device. For the same thicknesses of top silicon layer （10 μm） and BOX （0.375 μm）, the EI and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI, respectively.
A novel silicon-on-insulator （SOI） high-voltage device based on epitaxy-separation by implantation oxygen （SIMOX） with a partial buried n＋-layer silicon-on-insulator （PBN SOI） is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumu- lated on the interface between top silicon layer and buried oxide layer （BOX） effectively enhance the electric field of the BOX （EI）, resulting in a high breakdown voltage （BV） for the device. For the same thicknesses of top silicon layer （10 μm） and BOX （0.375 μm）, the EI and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI, respectively.
作者
胡盛东
吴丽娟
周建林
甘平
张波
李肇基
Hu Sheng-Dong;Wu Li-Juan;Zhou Jian-Lin;Gan Ping;Zhang Bo;Li Zhao-Ji(College of Communication Engineering,Chongqing University,Chongqing 400044,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)
基金
supported by the Natural Science Foundation of Chongqing Science and Technology Commission (CQ CSTC) of China (Grant No.cstcjjA40008)
