我国射线化学合成SiC纤维及相关材料的现状与展望

Present Status and Prospect of SiC Fibers and Related Materials Synthetized by Radiation Chemistry Method in China

传统CVD法合成的SiC纤维其最高使用温度仅有900℃,氧化先驱丝法制备的SiC纤维也只能用于1 000℃以下。主要介绍了我国射线化学合成法制备耐高温抗氧化的SiC纤维(使用温度高于1 600℃,单丝抗拉强度达2.2～2.7GPa)的系列关键技术,及其基于这些技术制备圆形截面管状SiC纤维(外径为10～15μm,壁厚2～3μm)的技术;同时也简介了射线化学应用于纳米微孔SiC功能陶瓷以及SiCf/SiC陶瓷基复合材料等方面的研究进展。

The maximum working temperature of SiC fibers synthetized by traditional CVD method is only about 900 ℃,the SiC fibers fabricated through oxidation precursor silk can only be used below 1 000 ℃.A series of key technologies for fabricating high temperature and oxidation resistant SiC fibers through radiation chemistry synthesis method in our country are introduced,and the fibers′ working temperatures are above 1 600 ℃,tensile strength are 2.2-2.7 GPa.Based on these technologies,circular cross-section tubular SiC fibers（outer diameter 10-15 μm,wall thickness 2-3 μm） were prepared;The reasearch progess of nano-pored SiC functional ceramics and SiCf/SiC ceramic matrix composites are also introduced briefly.