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Direct growth of single-walled carbon nanotubes on substrates 被引量:5

Direct growth of single-walled carbon nanotubes on substrates
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摘要 As one of the most promising candidate material for next generation electronic devices,the reliable and controllable synthesis of high quality single-walled carbon nanotubes(SWNTs) has long been an essential and important issue in the field.Direct growth of SWNTs on flat substrates by chemical vapor deposition(CVD) process is the best way to obtain SWNTs because it is immediately ready for building nano-devices.The orientation of the SWNTs has been well controlled by gas flow or substrate lattice during the CVD growth process.The chirality and structure control of SWNTs is still a big challenge.However,the conductivity selective growth has already partially succeeded.New catalysts have been explored to obtain SWNTs of higher quality.Along with the further progress in the study of the SWNT growth,the precise control over the orientation,position and conductivity of SWNTs is expected to meet the requirements of carbon-based nanoelectronics. As one of the most promising candidate material for next generation electronic devices, the reliable and controllable synthesis of high quality single-walled carbon nanotubes (SWNTs) has long been an essential and important issue in the field. Direct growth of SWNTs on flat substrates by chemical vapor deposition (CVD) process is the best way to obtain SWNTs because it is immediately ready for building nano-devices. The orientation of the SWNTs has been well controlled by gas flow or substrate lattice during the CVD growth process. The chirality and structure control of SWNTs is still a big challenge. However, the conductivity selective growth has already partially succeeded. New catalysts have been explored to obtain SWNTs of higher quality. Along with the further progress in the study of the SWNT growth, the precise control over the orientation, position and conductivity of SWNTs is expected to meet the requirements of carbon-based nanoelectronics.
出处 《Chinese Science Bulletin》 SCIE CAS 2012年第2期225-233,共9页
基金 supported by the National Basic Research Program of Chi-na (2011CB933003) the National Natural Science Foundation of China (11179011 and 21125103)
关键词 单壁碳纳米管 直接生长 衬底 化学气相沉积 结构控制 SWNTS 纳米电子学 电子设备 single-walled carbon nanotubes, chemical vapor deposition, selective growth
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