摘要
对酸性CuCl2蚀刻液在HCl/H2O2和HCl/NH4Cl两种体系下进行了水平动态蚀刻研究,分别对蚀刻均匀性和蚀刻速率进行了分析,结果表明面铜粗糙度和上下喷淋对蚀刻均匀性有很大影响,HCl/NH4Cl系统相对于HCl/H2O2系统具有更高的蚀刻速率,为工业生产提供相关的数据参考。
In this article,a dynamic etching of acid CuCl2 etching bath under the two systems of HCl/H2O2 and HCl/NH4Cl has been studied,the uniformity of etching and the etching rate has been respectively analyzed.The results show that the roughness of surface copper and the upper and the lower spray both influence on etching uniformity greatly,HCl/NH4Cl system has a higher etching rate relative to the HCl/H2O2 system and the relevant reference data has been provided for industrial production.
出处
《印制电路信息》
2012年第2期38-41,共4页
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