摘要
利用Langmuir-Blodgett(LB)技术在单晶硅表面转移岛状硬脂酸单层膜图案,通过各向异性的湿法刻蚀构筑倒锥形表面微结构.倒锥形结构的深度及表面抗反射性能主要与刻蚀的时间有关.这种方法结合了自组装面积大和湿法刻蚀成本低的优点,是一种廉价、高效的制备大面积抗反射微结构的方法,在降低光学器件和太阳能电池的成本方面具有潜在应用价值.
The inverted pyramidal microstructures were fabricated by anisotropic wet etching on the domain structure patterned Si substrate,which was obtained by transferring stearic acid monolayer onto Si substrate via Langmuir-Blodgett(LB) technique.The height of inverted pyramidal structures and the antireflective properties were mainly dependent on etching duration.This method combines the simplicity and scalability of self-assembly and low cost of chemical etching.It is an inexpensive and effective method to fabricate antireflective surface over large area,which has potential applications on reducing the cost of optical devices and solar cells.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第2期361-364,共4页
Chemical Journal of Chinese Universities
基金
国家自然科学基金(批准号:20773052)
国家“九七三”计划项目(批准号:2009CB939701)资助
关键词
LB单层膜
倒锥形微结构
单晶硅
抗反射
LB monolayer
Inverted pyramidal microstructure
Single crystal silicon
Antireflection