期刊文献+

倒锥形抗反射表面微结构的构筑

Fabrication of Inverted Pyramidal Microstructures with Antireflective Properties
下载PDF
导出
摘要 利用Langmuir-Blodgett(LB)技术在单晶硅表面转移岛状硬脂酸单层膜图案,通过各向异性的湿法刻蚀构筑倒锥形表面微结构.倒锥形结构的深度及表面抗反射性能主要与刻蚀的时间有关.这种方法结合了自组装面积大和湿法刻蚀成本低的优点,是一种廉价、高效的制备大面积抗反射微结构的方法,在降低光学器件和太阳能电池的成本方面具有潜在应用价值. The inverted pyramidal microstructures were fabricated by anisotropic wet etching on the domain structure patterned Si substrate,which was obtained by transferring stearic acid monolayer onto Si substrate via Langmuir-Blodgett(LB) technique.The height of inverted pyramidal structures and the antireflective properties were mainly dependent on etching duration.This method combines the simplicity and scalability of self-assembly and low cost of chemical etching.It is an inexpensive and effective method to fabricate antireflective surface over large area,which has potential applications on reducing the cost of optical devices and solar cells.
出处 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2012年第2期361-364,共4页 Chemical Journal of Chinese Universities
基金 国家自然科学基金(批准号:20773052) 国家“九七三”计划项目(批准号:2009CB939701)资助
关键词 LB单层膜 倒锥形微结构 单晶硅 抗反射 LB monolayer Inverted pyramidal microstructure Single crystal silicon Antireflection
  • 相关文献

参考文献18

  • 1Lee C. , Bae S. Y. , Mobasser S. , Manohara H.. Nano Lett. [J], 2005, 5:2438-2442.
  • 2Lee Y. J., Ruby D. S., PetersD. W., McKenzieB. B., HsuJ. W. P.. NanoLett.[J], 2008, 8:1501-1505.
  • 3XiJ. Q. , SchubertM. F., KimJ. K., SchubertE. F., ChenM. F., LinS. Y., LiuW., SmartJ. A.. Nat. Photonics[J],2007, 1 : 176-179.
  • 4Wu Z. Z. , Walish J. , Nohe A. , Zhai L. , Cohen R. E. , Rubner M. F.. Adv. Mater. [J], 2006, 18:2699-2702.
  • 5程轲,王书杰,付冬伟,丁万勇,邹炳锁,杜祖亮.单晶硅表面周期性微结构的减反射特性及光伏特性[J].高等学校化学学报,2010,31(8):1647-1650. 被引量:5
  • 6Bernhard C. G.. Endeavour[J], 1967, 26:79-84.
  • 7Kanamori Y. , Sasaki M. , Hane K.. Opt. Lett. [J], 1999, 24:1422-1424.
  • 8Kanamori Y. , Roy E. , Chen Y.. Microelectron. Eng. [J], 2005, 78/79:287-293.
  • 9Aydin C. , Zaslavsky A. , Sonek G. J. , Goldstein J.. Appl. Phys. Lett. [J], 2002, 80:2242-2244.
  • 10YuZ. N., GaoH., WuW., GeH. X., ChouS. Y.. J. Vac. Sci. Technol. B[J], 2003, 21:2874-2877.

二级参考文献153

  • 1林艳红,王德军,肇启东,李子亨,魏霄.ZnO纳米粒子自建场的形成及对其光电特性的影响[J].高等学校化学学报,2005,26(5):942-944. 被引量:2
  • 2Xia Y. N. , Rogers J. A, , Paul K. E. , et al.. Chem. Rev. [J] , 1999, 99; 1823-1848.
  • 3Maier S. A. , Brongersma M. L. , Kik P. G. , et al.. Adv. Mater. [J] , 2001, 13:1501-1505.
  • 4Byron D. G. , Xu Q. B. , Stewart M. , et al.. Chem. Rev. [J] , 2005, 105:1171-1196.
  • 5Lehn J. M.. Angew. Chem. Int. Ed. Engl. [J], 1990, 29:1304-1319.
  • 6Geissler M. , Xia Y. N.. Adv. Mater. [J], 2004, 16:1249-1269.
  • 7ChengJ. Y., Ross C. A., Smith H. I., etal.. Adv. Mater.[J],2006, 18:2505-2521.
  • 8Xia Y. N. , Zhao X. M. , Whitesides G. M.. Microelectron. Eng. [J], 1996, 32:255-268.
  • 9Park M. , Harrison C. , Chaikin P. M. , et al.. Science[J] , 1997, 276:1401-1404.
  • 10Trau M. , Yao N. , Kim E. , et al.. Nature[J] , 1997, 390:674-676.

共引文献12

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部