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60GHz宽调谐范围推—推压控振荡器设计 被引量：1

A 60 GHz wide tuning range push-push VCO
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摘要 基于65nmCMOS工艺实现了60GHz推—推压控振荡器(VCO)设计。采用互补交叉耦合去尾电流源结构以降低相位噪声。压控振荡器输出包含两级缓冲放大器,第二级缓冲放大器偏置在截止区附近以增大二次谐波的输出功率。在1.2/0.8V电源电压下,压控振荡器核心和缓冲放大器分别消耗2.43mW和2.95mW。在偏离中心频率1MHz处相位噪声为-90.7dBc/Hz。输出功率为-2.92dBm。特别的,压控振荡器的调谐范围达到9.2GHz(15.3%),与调谐范围相关的性能指标FOMT为-182.7dBc/Hz。该压控振荡器可应用于57GHz～64GHz开放频段超高速短距离无线通信。 A 60 GHz push-push VCO is implemented in 65nm CMOS process.Complementary cross-coupled topology without tail current source is adopted to lower the phase noise.The second stage of the buffer is biased in the pinch off region to increase the output power.At 1.2/0.8 V power supply,the VCO core and output buffers consume 2.43 mW and 2.92 mW of power,respectively.The phase noise at 60 GHz is-90.7 dBc/Hz at 1 MHz frequency offset from the carrier,and the output power is-2.92 dBm.Especially,this VCO achieves tuning range of 9.2 GHz（15.3%）,and shows the tuning-related figure-of-merit FOMT of-182.7 dBc/Hz.The VCO can be applied to 57 GHz^64 GHz unlicensed high speed short range communication.
作者 陈阳平 叶禹
机构地区 电子科技大学电子工程学院 中国科学院上海微系统所
出处 《信息技术》 2012年第1期25-28,共4页 Information Technology
基金 国家重大科技专项(2011ZX02506-004)
关键词 压控振荡器 推—推 宽调谐范围 相位噪声 VCO push-push wide tuning range phase noise
分类号 TN752 [电子电信—电路与系统]
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参考文献11

  • 1Doan C H et al. Millimeter-wave CMOS design[J]. IEEE J. Solid - State Circuits, 2005, 40( 1 ) : 144 -155.
  • 2Razavi B. A 60-GHz CMOS receiver front-end[J]. IEEE J. Solid - State Circuits, 2006, 41 ( 1 ) : 17 - 22.
  • 3Tomkins A, Arc, ca R A, Yamamoto T , et al. Voinigeseu. A zero-IF 60 GHz 65 nm CMOS transceiver with direct BPSK modulation demonstrating up to 6 Gb/s data rates over a 2 m wireless link [ J ]. IEEE J. Solid State Circuits, 2009, 44(8) :2085 - 2099.
  • 4Yamamoto K . A 1.8-V Operation 5-GHz-Band CMOS Frequency Doubler Using Current-Reuse Circuit Design Technique [ J ]. IEEE J. Solid-State Circuits, 2005, 40(6) , 1288 - 1295.
  • 5Cao C. Millimeter-Wave Voltage-Controlled Oscillators in 0.13-um CMOS Technology [ J ]. IEEE J. Solid-State Circuits, 2006, 41 (6) :1297 - 1303.
  • 6Li L. Design and analysis of a 90 nm ram-Wave Oscillator using Inductiv-Division LC Tank Millimeter-wave voltage-controlled oscillator in 0.13-urn CMOS technology [ J ]. IEEE J. Solid-State Circuits, 2009,44-(7) :1950 - 1957.
  • 7Soorapanth T, Yue C P, Shaeffer D K, et al. Analysis and optimization of accumulation-mode varactor for RFICs[J]. Symp. VLSI Circuits Dig. Tech. Papers, 1998:32 - 33.
  • 8Apfieio R, Hajimiri A. A CMOS Differential Noise Shifting Colpitts VCO [ J ]. IEEE Inf. Solid-State Circuit Conf Dig. Tech. Papers, 2002, 1(4) :3 -7.
  • 9Andreani P, Sjoland H. Tail current noise suppression in RF CMOS VCOs[J]. IEEE J. Solid-state Circuits, 2002, 37(3) :342 -348.
  • 10Tiebout M, Wohlmuth H D, W Simburger. A 1 V 51 GHz fitlly-integrated VCO in 0. 12urn CMOS[ J]. IEEE Int. Solid-State Circuirts Dig. Tech. Papers, 2002:465 -468.

同被引文献6

  • 1仇应华,王志功,朱恩,冯军,熊明珍,夏春晓.基于GaAs工艺的36GHz压控振荡器[J].Journal of Semiconductors,2006,27(3):556-559. 被引量：1
  • 2方芳,王志功,刘军,等.35GHzHEMT压控振荡器[C]//全国微波毫米波会议.长沙,中国.1999:229-232.
  • 3MUSA A, WEI D, SIRIBURANON T, et al. A compact, low-power and low-jitter dual-loop injection locked PI.L using all-digital PVT ealibration [J]. IEEEJ Sol Sta Cire, 2014, 49(1): 50-60.
  • 4ZHU G, DIAO S X, LIN FJ. A low-power wide-band 20 GHz VCO in 65 nm CMOS [C]///5th GSMM. Harbin, China. 2012: 291-294.
  • 5HAJIMIRI A, I.EE T H. A general theory of phase noise in electrical oscillators [J]. IEEE J Sol Sta Cire, 1998, 33(2): 179-194.
  • 6JERNG A, SODINI C G. The impact of deviee type and sizing on phase noise mechanisms [J]. IEEE J Sol Sta Circ, 2005, 40(2): 360-369.

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信息技术
2012年 第1期

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