磁性半导体隧道结中自旋注入效率的温度效应

Temperature Effects of Spin Injection Efficiency in Magnetic Semiconductor Tunnel Junction

利用了隧道哈密顿方法研究了稀磁性半导体(DMS)到非磁性半导体(SM)隧道结中自旋注入效率与温度的关系。计算表明,随着温度的升高,自旋注入效率逐渐降低。这主要是由两方面的原因引起的,其一温度升高稀磁半导体的极化率降低;其二温度升高自旋反转隧穿增加。

Using the tunnel Hamiltonian method,the spin injection efficiency from diluted magnetic semiconductor（DMS） to no-magnetic semiconductor（SM） with temperature is studied.Numerical calculations indicate that with increasing temperature spin injection efficiency decreases.This is mainly caused by two reasons;the first the polarization rate of diluted magnetic semiconductor is reduced with raising of temperature;the second the spin-flip tunneling is increased with the temperature raised.