摘要
The influences of temperature, H2SO4 concentration, CuSO4 concentration, reaction time and SO2 flow rate on the reduction of arsenic（V） with SO2 were studied and the deposition behavior of arsenic （III） under the effect of concentration and co-crystallization was investigated in copper electrolyte. The results indicate that reduction rate of arsenic （V） decreases with increasing temperature and H2SO4 concentration, but increases with increasing SO2 flow rate and reaction time, and it can reach 92% under appropriate conditions that reaction temperature is 65 °C, H2SO4 concentration is 203 g/L, CuSO4 concentration is 80 g/L, reaction time is 2 h and SO2 gas flow rate is 200 mL/min. To remove arsenic in the copper electrolyte, arsenic （V） is reduced to trivalence under the appropriate conditions, the copper electrolyte is concentrated till H2SO4 concentration reaches 645 g/L, and then the removal rates of As, Cu, Sb and Bi reach 83.9%, 87.1%, 21.0% and 84.7%. The XRD analysis shows that crystallized product obtained contains As2O3 and CuSO4·5H2O.
探讨了反应温度、H2SO4浓度、CuSO4浓度、反应时间、SO2气流量等因素对SO2还原铜电解液中As(Ⅴ)的影响,并对浓缩共晶作用下铜电解液中As(III)的脱除行为进行了研究。研究表明:As(V)还原率随着反应温度和H2SO4浓度的升高而降低,随着SO2气流量的增大及反应时间的延长而升高。当反应温度为65°C,H2SO4浓度为203g/L,CuSO4浓度为80g/L,SO2流量为200mL/min,反应时间为2h时,铜电解液中As(Ⅴ)还原率为92%;铜电解液中的As(V)还原后,将铜电解液浓缩至H2SO4浓度为645g/L时,As、Cu、Sb、Bi脱除率分别达到83.9%,87.1%,21%,84.7%.XRD分析结果表明:结晶产物中含有As2O3和CuSO4·5H2O等物相。
