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Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs 被引量：1

Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs
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摘要 A new 2D analytical drain current model is presented for symmetric double-gate fully depleted nanoscale SOI MOSFETs.Investigation of device parameters like transconductance for double-gate fully depleted nanoscale SOI MOSFETs is also carried out.Finally this work is concluded by modeling the cut-off frequency, which is one of the main figures of merit for analog/RF performance for double-gate fully depleted nanoscale SOI MOSFETs.The results of the modeling are compared with those obtained by a 2D ATLAS device simulator to verify the accuracy of the proposed model. A new 2D analytical drain current model is presented for symmetric double-gate fully depleted nanoscale SOI MOSFETs.Investigation of device parameters like transconductance for double-gate fully depleted nanoscale SOI MOSFETs is also carried out.Finally this work is concluded by modeling the cut-off frequency, which is one of the main figures of merit for analog/RF performance for double-gate fully depleted nanoscale SOI MOSFETs.The results of the modeling are compared with those obtained by a 2D ATLAS device simulator to verify the accuracy of the proposed model.
作者 Rajiv Sharma Sujata Pandey Shail Bala Jain
机构地区 Department of Electronics and Communication Engineering Department of Electronics and Communication Engineering
出处 《Journal of Semiconductors》 EI CAS CSCD 2012年第2期28-35,共8页 半导体学报（英文版）
关键词 DOUBLE-GATE fully depleted SILICON-ON-INSULATOR Poisson＇s equation radio frequency ATLAS double-gate fully depleted silicon-on-insulator Poisson＇s equation radio frequency ATLAS
分类号 TN386.1 [电子电信—物理电子学] TN386 [电子电信—物理电子学]
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参考文献18

  • 1Frank D J, Dennard R H, Nowak E, et al. Device scaling limits of Si MOSFETS and their application dependencies. IEEE Proc, 2001: 259.
  • 2Kim K, Fossum J G. Double-gate CMOS: symmetrical-versus asymmetrical-gate devices. IEEE Trans Electron Devices, 2001, 48(2): 296.
  • 3Colinge J P. Novel gate concepts for MOS device. Eur Solid-State Device Res Conf Proc, ESSDERC, 2004, 34:48.
  • 4Taut Y. An analytical solution to a double-gate MOSFET with undoped body. IEEE Electron Device Lett, 2000, 21(5): 245.
  • 5Taur Y. Analytic solutions of charge and capacitance in symmet- ric and asymmetric double-gate MOSFETs. IEEE Trans Electron Devices, 2001, 48(12): 2864.
  • 6Oritiz-Conde A, Garcia-Sonchez F J, Malobabic S. Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs. IEEE Trans Electron Devices, 2005, 52(7): 1669.
  • 7Taur Y, Liang X, Wang W, et al. A continuous, analytic draincurrent model for DG MOSFETs. IEEE Electron Device Lett, 2004, 25(2): 107.
  • 8Ortiz-Conde A, Garcia-Sanchez F J, Muci J. Rigorous analytic solution for the drain-current of undoped symmetric dual-gate MOSFETS. Solid-State Electron, 2005, 49(4): 642.
  • 9He J, Xi X, Lin C H, et al. A non-charge sheet analytic theory for undoped symmetric double-gate MOSFET from the exact solu- tion of Poisson's equation using SSP approach. NSTI-Nanotech Workshop Proc, 2004:124.
  • 10He J, Liu F, Zhang J, et al. A carrier-based approach for compact modeling of the long-channel undoped sym-metric double-gate MOSFETs. IEEE Trans Electron Devices, 2007, 54(5): 1206.

引证文献1

Journal of Semiconductors
2012年 第2期

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