利用等离子体辅助脉冲磁控溅射实现多晶硅薄膜的低温沉积

Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering

本文报道了利用电感耦合等离子体辅助中频直流脉冲磁控溅射在温度300℃以下沉积氢化多晶硅薄膜的制备方法.利用拉曼散射、X射线衍射、透射电子衍射和傅里叶红外光谱对多晶硅薄膜进行了表征.详细研究了氢气在沉积过程中所起的作用,并结合Langmuir探针和发射光谱等等离子体诊断方法,对辅助等离子体源在多晶硅薄膜制备过程中所起到的作用进行了讨论.

Hydrogenated poly-crystalline silicon thin films are deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering at a temperature below 300℃.The samples are characterized by X-ray diffraction,Raman scattering,transmission electron microscopy,and Fourier transform infrared spectroscopy.The relationship between hydrogen dilution ratio and the characteristic of thin film is studied systematically.The mechanism of crystallization is discussed on the basis of the results of diagnosis of plasma by Langmuir probe and optical emission spectra.