摘要
设计了一种基于一维光子晶体(PC,photonic crystal)高阶禁带性质的新型带阻滤波器,其结构形式为Si(空气|Si)5,晶格周期长度为15μm,滤波中心频率位于1.55μm,带宽约为10nm。利用光刻和ICP(inductively coupled plasma)刻蚀技术,将这一滤波器制作在SOI材料上,并对其透射谱特性进行理论计算和实验测量。结果表明,理论计算和实验测量的结果吻合良好,证明了高阶禁带是降低PC加工难度的有效方法。
A new type of band-stop filter with center frequency at 1.55 μm and band width about 10 nm is designed,which is based on the high-order forbidden band of one-dimensional photonic crystal(1D PC) with a structure of Si(air|Si)5.The periodic length of 1D PC is 15 μm and it is fabricated on SOI materials by lithographic process and inductively coupled plasma(ICP) process.The filter transmittance spectra are measured and analyzed,and the results obtained from experiment can agree well with that of theory.The results prove that the high-order band gap is an effective method to lower the fabrication difficulty of PC.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2012年第1期83-88,共6页
Journal of Optoelectronics·Laser
基金
国家自然科学重点基金(60837001)资助项目
关键词
光学器件
光子晶体(PC)
高阶禁带
透射谱
滤波器
optical devices
photonic crystal(PC)
high-order forbidden band
transmittance spectrum
filter