摘要
Integrated circuits of deep submicron(DSM) CMOS technology are advantageous in volume density, power consumption and thermal noise for multichannel particle detection systems,but there are challenges in the front-end circuit design.In this paper,we present a 0.18μm CMOS front-end readout circuit for low noise CdZnTe detectors in tens of pF capacitance.Solutions to the noise and gate leak problems in DSM technologies are discussed in detail.A prototype chip was designed,with a charge sensitive preamplifier,a 4th order semi-Gaussian shaper and several output drivers.Test results show that the chip has an equivalent noise charge of 164 e,without connecting it to a detector,with an integral nonlinearity of<0.21%and differential nonlinearity of<3.75%.
Integrated circuits of deep submicron （DSM） CMOS technology are advantageous in volume density, power consumption and thermal noise for multichannel particle detection systems, but there are challenges in the front-end circuit design. In this paper, we present a 0.18 μm CMOS front-end readout circuit for low noise CdZnTe detectors in tens of pF capacitance. Solutions to the noise and gate leak problems in DSM technologies are discussed in detail. A prototype chip was designed, with a charge sensitive preamplifier, a 4th order semi-Gaussian shaper and several output drivers. Test results show that the chip has an equivalent noise charge of 164 e, without connecting it to a detector, with an integral nonlinearity of 〈0.21% and differential nonlinearity of 〈 3.75%.
基金
supported by the National Natural Science Foundation of China (No.61006021)
