YBCO涂层导体用YSZ缓冲层的快速制备研究

The influences of rapid growth of yttria-stabilized ZrO_2 buffer layers for YBCO coated conductors

基于反应直流溅射法,采用镶嵌有钇粒的金属锆作为靶材,去离子水蒸汽为氧化反应气体,在有Y2O3种子层的双轴织构Ni-5at.%W基带上,系统地研究了温度和卷绕速度对YSZ阻挡层薄膜结构及表面形貌的影响。X射线衍射(XRD)分析表明,生长温度在700℃时制备的薄膜呈现明显的(002)取向;原子力显微镜(AFM)分析显示,该温度下制备的薄膜表面致密、无孔洞、无裂纹。在不同的卷绕速度下,虽然薄膜均为纯c轴取向,但其均方根粗糙度(RMS)和微粒大小均有较大差别。快速制备可达到抑制基片表面氧化、助于薄膜取向改善、提高薄膜制备效率的目的。

Direct current （dc） reactive sputtering is one of the most promising approaches for fabricating yttria - stabilized ZrO2 （YSZ） buffer layers. In this paper, YSZ films were deposited on Y203 -buffered Ni 5at. % W substrates with Zr target em- bedded with yttrium discs. The influences of the growth temperature and rolling speed were investigated detailedly. X- ray dif- fraction （XRD） measurement revealed that the YSZ films were preferential （002） orientation at 700℃. Atomic force microscopy （AFM） analysis indicated that the surface was smooth with few pores and crack free. The films prepared with different rolling speed were all c -axis oriented, however, their RMS and grain size were different. Rapid growth could restrain the oxidation of the substrates surface, improve the textures and enhance the fabricating efficiency.