应用性极薄铜薄膜电阻的自动测量

In-situ measurement of the resistance of extremely thin copper film

本文采用实时测量方法,测量了铜薄膜导电时的电阻。利用监测电阻状态可制作极薄的膜材。与接近块状薄膜相比较,导电性能有所不同。测量了真空下与常态下其随时间变化状况,观察到其形成后有波动的状态。使用光学干涉法测定了可作为常规电极极限态薄膜尺寸约为90 nm左右,其导通电流极限约为0.0290 A/mm,在大气中氧化过程极快,电阻也迅速增加,也更容易受到大电流的破坏。

The resistance of copper film which just showed conductance in the growing process was in-situ measured. By resistance monitor and process eontroll, it is easy to get very thin film, the conductance of which was different compared with those similar to the bulk films. The variation of resistance with time was measured both in vacuum and air condition. The resistance fluctuation was observed after the film formation. By the optical interference method, the thickness of film which can be conventional electrode is about 90nm, and the secure current density limit on passing through the film is about 0.0290A/mm. if the film was placed in the air, its resistance increased rapidly as it was oxidized easily, which would be damaged by the same current more easily.