摘要
本文研制了一种较高档的磁控溅射镀膜设备,用于微电子器件规模化生产过程中的基片表面镀膜。该设备采用双真空室结构,使溅射室始终维持较高的真空度和洁净度,提高镀膜质量和镀膜效率。环绕溅射室设计了3个直流靶和1个射频靶,能够溅射金属膜、介质膜、混合物和化合物薄膜。文中详述了该设备的设计原理、总体结构及工艺控制方法。该磁控溅射台已开发成功并投入使用,替代了同类进口设备。
An advanced magnetron-sputtering equipment was developed to deposit film on substrates in scale production of microelectronic devices. The equipment has double vacuum chambers with high vacuum degree and cleanness to improve the deposition quality and efficiency. Three DC targets and one RF target were designed around the sputtering chamber to deposit metal, dielectric, mixture and compound films. The principle, structure and process control method of the equipment were described in detail. Presently, the equipment has been developed and put into use, as a substitute of similar imported devices.
出处
《真空》
CAS
2012年第1期57-59,共3页
Vacuum
关键词
磁控溅射
双室结构
直流溅射
射频溅射
magnetron sputtering
double chambers
DC sputtering
RF sputtering