共蒸发制备GaSb多晶薄膜的研究

Study of GaSb polycrystalline films grown by co-evaporation

GaSb的禁带宽度为0.72eV,是热光伏电池的理想材料。采用共蒸发的方法,在普通玻璃衬底上生长GaSb多晶薄膜。通过XRD谱、Hall及透射反射谱测试,研究了Ga、Sb源的蒸发温度、衬底温度以及薄膜厚度对薄膜的结构特性和光电特性的影响。研究表明,随衬底温度的升高、薄膜厚度的增加,晶粒尺寸逐渐增大;随衬底温度的升高、Ga源温度的降低以及厚度的增加,迁移率逐渐上升,迁移率最高可达172cm2/(V.s);随衬底温度的降低、Ga源温度的提高以及厚度的增加,载流子浓度逐渐增加。

The bandgap of GaSb is 0.72eV,which is an ideal material for thermo-photovoltaic.In this paper,GaSb polycrystalline thin films were grown on ordinary glass substrates by the method of the co-evaporation.By XRD,Hall and transmission-reflection spectrum,structural properties and optoelectronic properties were investigated under various Ga Sb evaporation temperature,varied substrate temperature and different film thickness.It is shown that grain size is increased with increasing substrate temperature and thin film thickness;the mobility is increased with increasing substrate temperature,increasing thin film thickness and decreasing Ga evaporation temperature,which reaches 172cm2/（V·s）;the concentration is increased with decreasing substrate temperature,increasing Ga evaporation temperature and increasing thin film thickness.