CMOS器件抗静电措施的研究

Anti-static measures of CMOS devices

由于CMOS器件静电损伤90%是延迟失效,对整机应用的可靠性影响太大,因而有必要对CMOS器件进行抗静电措施。本文描述了CMOS器件受静电损伤的机理,从而对设计人员提出了几种在线路设计中如何抗静电,以保护CMOS器件不受损伤。

As CMOS devices are static damage to 90% delay failure,the reliability of the whole application too much influence,hence the need for anti-static measures of CMOS devices.This paper describes the CMOS devices from electrostatic damage mechanism,which made several of the designer how the anti-static circuit design,to protect CMOS devices from damage.