GaN基功率LED电应力老化早期的退化特性

Early Degradation of GaN-based Power LED under Electrical Stresses

对InGaN/GaN多量子阱蓝光和绿光LED进行了室温900 mA电流下的电应力老化,发现蓝光LED老化到24 h隧穿电流最小,绿光LED到6 h隧穿电流最小;同时,两种LED的反向漏电也最小、光通量最大,随后绿光LED的反向漏电增加较快且光通量衰减较快。把热退火效应和电应力下缺陷的产生分别看成正负加速因子,绿光LED的负加速因子的增加速度比蓝光LED大,衰减较快。该结果对GaN LED的改进有一定参考价值。

InGaN/GaN-based blue and green light emitting diodes （LEDs） were under an aging with DC current of 900 mA at room temperature. The tunneling current was minimum after 24 h and 6 h for blue and green LED due to the thermal annealing effect which reduced defects. At the same time, the leakage current was minimum and light output was maximum. Then the leakage current increased and luminous flux reduced for green LED. The thermal annealing effect and defect generation were proposed as positive and negative accelerating factor, respectively. The negative accelerating factor of green LED increased quicker than that of blue LED and green LED decreased seriously. The results of analysis have a certain reference value for the improve of GaN LED.