三种LTO磁头性能分析与比较

Analysis and comparison of three generations of LTO magnetic heads

由惠普、IBM和希捷公司共同开发的线性磁带开放技术(LTO),自问市10周年以来,其驱动器发货量现已超过330万件,是现在服务器储存市场的主流产品。LTO制式产品的前三代产品均采用各向异性磁电阻磁头,本文详细地研究了三代LTO磁头的设计和关键功能参数,结果表明,写线圈的多种设计均能满足产品要求,磁电阻材料NiFe和偏转磁场材料CoZrMo的厚度是影响磁头性能的主要因素,磁头的性能随磁电阻材料NiFe的厚度的减小会有所下降。

The LTO was developed by HP,IBM and Seagate,and more than 3300 thousands of drivers have been produced since LTO was pushed to market 10 years ago,and become the market mainstream now.All three generations of products,LTO1,LTO2 and LTO3 adopt anisotropic magnetoresistive heads.Their design and key function parameters were analized and compared,and the results showed that different writer dasigns can meet requirement.The thickness of NiFe and SAL（CoZrMo） is the main factors affecting the performance of magnetic heads,and the performance of magnetic heads decreases with decreasing the NiFe thickness.