射频磁控溅射制备氧化钒薄膜的研究

VO_x films prepared by RF magnetron sputtering

氧化钒(VOx)薄膜是一种广泛应用于红外热成像探测的薄膜材料,研究VOx薄膜的制备工艺、获取高电阻温度系数(TCR)的VOx薄膜具有重要意义。以高纯金属钒作靶材,采用射频磁控溅射的方法在室温下制备了VOx薄膜。主要研究了氩氧流量比以及功率等工艺参数对薄膜TCR的影响,获得了较好的工艺参数。采用万用表和X射线光电子能谱仪(XPS)分别测试了不同条件下射频磁控溅射法制备的VOx薄膜的电阻特性和薄膜成分,测试结果表明,采用所获得的较好工艺参数制备的VOx薄膜TCR值大于1.8%。

Vanadium oxide （VOx） film is a film material extensively used in the infrared thermal imaging detector, so it is important to study its deposition process and obtain the VOx films having high temperature coefficient of resistance （TCR）. VOx films were deposited using RF magnetron sputtering with a high purity vanadium metal target （99.99% ） at the room temperature. The influence of Ar/O2 ratio and sputtering power on TCR was researched, and the optimized technique parameters were obtained. The resistance properties of VOx films deposited by RF magnetron sputtering under the different process conditions were tested using the avometer and the film composition was tested using X-ray photoelectron spectroscopy （XPS）. Results showed the TCR of VOx films was better than 1.8%.