摘要
提出了用调制光谱信号强度表征半导体体材料及微结构的非线性极化率，研究了测量的原理和方法．
It is proposed to use the signal intensity of modulation spectra for characterizing the nonlinear susceptibility of bulk semiconductor materials and microstructures.The principle and method of measurement are investigated.The large difference,as high as several orders of magnitude,between the signal intensities of electroreflectance spectra of quantum dots in doped glass with different cluster size is discussed.
基金
国家自然科学基金
关键词
极化率
微结构
调制光谱
半导体材料
非线性
Susceptibility, Semiconductor Microstructures, Modulation Spectroscopy
