金属平面半导体量子阱微腔自发发射

Spontaneous Emission in Quantum Well Planar Micro\|Cavities with Metallic Mirrors *

应用微腔腔量子电动力学和半导体量子阱物理，讨论了平面半导体量子阱微腔的自发发射，得到了腔结构、量子阱参量和注入载流子下的微腔自发发射谱和载流子寿命．计算发现由于微腔和量子阱分别对光子和载流子的限制，平面微腔可以增进自发发射，具有很强单方向性．

Based on cavity quantum electrodynamics and physics of semiconductor quantum well, the spontaneous emission and spontaneous emission lifetime of the carrier in quantum well planar micro-cavities with metallic mirrors have been discussed. The spontaneous emission spectra are obtained for different mirror reflectivity and different cavity length, when the injection carrier density is fixed. As a result, spontaneous emission intensity,especially in one direction, can be enhanced for the confinements of the photons and the carries by the cavity and the quantum well, respectively.