多晶硅薄膜的新型激光晶化制备方法

Polycrystalline silicon thin film fabricated with novel laser crystallization

采用两步激光晶化方法制备了多晶硅薄膜 ,其晶粒尺寸为 1.1μm,比用传统单步晶化制备的薄膜晶粒尺寸大 ,表明该方法对扩大晶粒尺寸很有效。拉曼光谱分析表明 0 .30 J/

In Chinese Polycrystalline silicon thin film is fabricated with a novel technique-two step laser crystallization The grain size of the film is 1 1 μm, better than that of the film fabricated with conventional single step laser crystallization The new approach is effective for enlarging grain size and improving the performances the transistor of the new film (4 refs )