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外电场对直接带隙Ge量子阱中的光学性质的影响 被引量：4

External electric field effects on the optical properties in direct-gap Ge quantum well
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摘要 在有效质量近似下,考虑到外电场的影响,详细研究了直接带隙Ge/GeSi量子阱中带间光跃迁吸收系数和阈值能量随量子阱阱宽,外电场强度的变化情况.结果表明:随着外电场的增强,带间光跃迁吸收强度会逐渐减弱,阈值能量减小,吸收曲线向低能方向移动,出现了红移现象.此外,当量子阱比较大时,外电场对量子阱中带间光跃迁阈值能量的影响更加明显. Within the framework of the effective-mass approximation, the dependence of the interband optical absorption coefficient and threshold energy on the well width and external electric field in direct-gap Ge/GeSi quantum well has been investigated in details. Numerical results indicate that when the electric field is increased, the intensity of the interband optical absorptions is reduced. Moreover, the threshold energy is decreased and the absorption peak is moved towards the lower energy. Red shift is observed. In addition, when the size of the quantum well is large, the electric field effect on the threshold energy of the interband optical transitions is more obvious.
作者 段坤杰 衡丽君
机构地区 河南城建学院
出处 《原子与分子物理学报》 CAS CSCD 北大核心 2012年第1期96-100,共5页 Journal of Atomic and Molecular Physics
关键词 量子阱 吸收系数 阈值能量 quantum well absorption coefficient threshold energy
分类号 O56 [理学—原子与分子物理]
  • 相关文献

参考文献15

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同被引文献37

  • 1危书义,杨艳岭,夏从新,吴花蕊,赵旭.耦合GaN/Al_xGa_(1-x)N量子点的非线性光学性质[J].液晶与显示,2007,22(3):240-244. 被引量：5
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  • 3Tsujino S, Sigg H,Mussler G. Photocurrent and transmission spectroscopy of direct-gap interband transitions in Ge/SiGe quantum wells[J]. Appl Phys Lett, 2006 ,89 :262119.
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  • 7Xia C X,Liu Y M,Wei S Y,et al. Exciton States and Interband transitions in the direct-gap Ge/SiGe quantum dot[J]. Phys Letts B,2010,24(12):1191-1197.
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引证文献4

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原子与分子物理学报
2012年 第1期

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