摘要
Novel ternary Cr2O3-SiC-TiO2 composites were synthesized by implanting Cr3＋ into SiC-TiO2 via sol-gel and impregnation approaches. The results from X-ray diffraction, scanning electron microscopy and trans- mission electron microscopy show that the Cr3. species were doped onto the surface of the SiC-TiO2 carrier. The diffuse reflectance ultraviolet-visible absorption spectra revealed that the absorption edges of the ternary Cr2O3-SiC-TiO2 composites were gradually shifted red with increasing chromium content. The luminescence intensities of the composites decreased with increasing doped Cr3＋ content due to the reduction in the number of recombination sites of electron-hole pairs. The ternary Cr2O3-SiC-TiO2 com- posites showed high hydrogen-producing activities, which probably results from the formation of donor levels of the Cr3＋ species in the forbidden band of the SiC semiconductor.
Novel ternary Cr2O3-SiC-TiO2 composites were synthesized by implanting Cr3＋ into SiC-TiO2 via sol-gel and impregnation approaches. The results from X-ray diffraction, scanning electron microscopy and trans- mission electron microscopy show that the Cr3. species were doped onto the surface of the SiC-TiO2 carrier. The diffuse reflectance ultraviolet-visible absorption spectra revealed that the absorption edges of the ternary Cr2O3-SiC-TiO2 composites were gradually shifted red with increasing chromium content. The luminescence intensities of the composites decreased with increasing doped Cr3＋ content due to the reduction in the number of recombination sites of electron-hole pairs. The ternary Cr2O3-SiC-TiO2 com- posites showed high hydrogen-producing activities, which probably results from the formation of donor levels of the Cr3＋ species in the forbidden band of the SiC semiconductor.
基金
the financial support by the Industrial Key Project of Science and Technology of Shaanxi Province(No.2010K01-080)
the Open Fund of State Key Laboratory of Architecture Science and Technology in West China(XAUAT)
Xi'an University of Architecture and Technology(No.10KF05)
