固相反应法合成黄铜矿型CuInSe_2多晶粉末及其蒸发薄膜的光电性能分析

CuInSe-2 Thin Film Prepared by Evaporation of Chalcoprite CuIn Se-2=Powder Formed by Solid-Rection

本语文用室温固相反应法和真空蒸发法分别合成了黄铜矿型ＣｕＩｎＳｅ２多晶粉杯和制备了富Ｃｕ的ＣｕｘＩｎ１－ｘＳｅ２薄膜，用ＸＲＤ，ＩＣＰ，ＨＡＬＬ和ＵＶ－ＶＩＳ波段光透射分别测量了样品的原子结构，化学成分及光电性能，发现在两元固相反应中，Ｉｎ－Ｓｅ反应很不完全而Ｃｕ－Ｓｅ就不能反应，而三元固相反应的粉末样品中即使有些杂质，但黄铜矿型ＣｕＩｎＳｅ２的衍射峰非常突出，而且所得粉末样品都是富Ｃｕ的。

CuInSe-2 thin film was prepared by a process which includes two steps:(a)the formation of chalcoprite CuInSe-2 powder by solid-Rection,and (b) vacuum evaporation of the powder to form CuInSe-2 thin films on glass substrate.Xray diffraction (XRD),Hall system(Hall 5500PC) and optical transmission measurements were used to characterize the powder and thin film specimen.The analysis showed that the powder was Chalcoprite polycrystalline CuInSe-2 and some of In composition was lost.The structure,optical and electric peroprties of CuInSe-2 thin film were heavily effected by the substrate temperature and the ratio of Cu/In.