碳热还原法制备SiC纳米线及其结构表征

Synthesis and Characterization of SiC Nanowires Using Carbon-Thermal Reduction

采用简单的碳热还原法,以碳粉和SiO2微粉分别作为碳源和硅源,在1 550℃高温真空气氛箱式炉中制备SiC纳米线。并利用X射线衍射(XRD)、扫描电镜(SEM)和透射电镜(TEM)、傅里叶变换红外(FTIR)等测试手段对反应产物进行组分、形貌和结构表征。研究结果表明:产物为直线六棱柱形状的β-SiC纳米线,直径在50～300nm之间,纳米线内部含有较多的堆垛层错;纳米线主要以气—固(VS)机制生长。

SiC nanowires are synthesized via the reaction between carbon powder and silicon dioxide powder by a simple carbon-thermal reduction in high-temperature vacuum furnace at 1550 ~C. X-ray dif- fraction （XRD）, Scanning electron microscopy （SEM） and transmission electron microscopy （TEM）, Fourier transform infrared spectrometer （FTIR） are employed to characterize the obtained product. The β- SiC nanowires experience a beeline hexagonal section and diameters in the range of 50 -300 nm. A high stacking faults density exists in the nanowires. The growth mechanism of the nanowires is considered to involve a vapor-solid （VS） process.