典型分解炉中硅烷分解沉积速率的研究

Deposition Rate of Polycrystalline Silicon from Monosilane Phyrolysis

研究在典型硅烷分解炉中硅烷分解沉积多晶硅的沉积速率。硅烷分解沉积多晶硅实验在硅棒表面温度790～900℃、炉内气压5×104 Pa条件下,探讨硅棒温度、硅烷流速与沉积速率的关系。结果显示:沉积反应活化能53.4kJ/mol。并与真空条件下沉积硅的过程进行对比,提出在典型硅烷分解炉中提高多晶硅沉积速率的可能途径。

This paper studies the deposition rate of monosilane pyrolysis. Experiment is performed in a typical chemica｜ vapor deposition reactor in a temperature range of 790-900℃ and the pressure of 5×10^4 Pa. It is examined on relationship of silicon rod temperature and gas flow rate to deposition rate during the decomposition process. The activation energy of deposition is estimated to be 53. 4kJ/mol. Compared with reported results on deposition in vacuum reactor, there are some possibilities to increase the deposition rate in a typical chemical vapor deposition reactor.