摘要
The influences of doping of MnNb206 on the structure and dielectric properties of Ag（Nb0.sTa0.2）O3 were illustrated. Ag（Nb0.sTa0.2）O3 samples doped with different amount of preformed MnNb206 （1 mol%, 2 mol%, 3 mol%, 4 mol%, 6 mol%, 8 mol%） were prepared by traditional solid-state reaction method and characterized by XRD, SEM and EDS, and the dielectric properties of samples were compared. The experiment results indicated that when the doping amount of MnNb206 was greater than 3 mol%, second phase appeared because of the solid solution limit. The permittivity of the Ag（Nb0.sTa0.2）O3 samples doped with MnNb206 firstly increased and then decreased with the sintering temperature, while the dielectric loss decreased first, and then increased slightly. 1 100 ℃seems to be the most proper sintering temperature for most of the samples. When the amount of MnNb206 is about 3 mol%, the samples have the best dielectric properties, larger permittivity and smaller dielectric loss.
The influences of doping of MnNb206 on the structure and dielectric properties of Ag（Nb0.sTa0.2）O3 were illustrated. Ag（Nb0.sTa0.2）O3 samples doped with different amount of preformed MnNb206 （1 mol%, 2 mol%, 3 mol%, 4 mol%, 6 mol%, 8 mol%） were prepared by traditional solid-state reaction method and characterized by XRD, SEM and EDS, and the dielectric properties of samples were compared. The experiment results indicated that when the doping amount of MnNb206 was greater than 3 mol%, second phase appeared because of the solid solution limit. The permittivity of the Ag（Nb0.sTa0.2）O3 samples doped with MnNb206 firstly increased and then decreased with the sintering temperature, while the dielectric loss decreased first, and then increased slightly. 1 100 ℃seems to be the most proper sintering temperature for most of the samples. When the amount of MnNb206 is about 3 mol%, the samples have the best dielectric properties, larger permittivity and smaller dielectric loss.
作者
XIAO Mi
JIA Cuiran
WANG Xin
肖谧;JIA Cuiran;WANG Xin(School of Electric Information Engineering,Tianjin University,Tianjin 300072,China)
