利用康普顿散射分析碳化硅陶瓷在高温下使用氧化后组成的变化

Study on the Variation of Contents of Components of Silicon Carbide Ceramics After Oxidation in Use at High Temperatures by Compton Scattering

用波长色散X射线荧光光谱仪,通过测量散射体(样品)对铑的康普顿散射线(RhKα-C)强度的变化,实现了碳化硅陶瓷在高温下使用时氧化情况的监控。用一套8只碳化硅校准样品建立了康普顿散射强度与样品平均原子序数之间关系的数学模型。利用此模型计算了碳化硅氧化后组成含量的变化。结果表明:用此方法测得的样品中碳、硅及氧的相对含量与X射线光电子能谱法所测结果相符,两者间的相对偏差均小于1%。据此认为,此方法所测得的数据是可以接受的。

Monitoring of oxidation situation of silicon carbide ceramics in use at high temperatures was realized by measuring the change of compton scattering intensity of the scatterer（i.e.,the sample） against rhodium（RhKα-C）,with a wavelength dispersion X-ray fluorescence spectrometer.A mathematical model relating the compton scattering intensity with the average atomic number of the samples was established by using a set of 8 SiC calibration samples,and the variation of contents of components of SiC after oxidation at high temperature was calculated with this model.It was shown that the results of C,Si and O found by this method were in consistency with the results found by XPS,giving values of relative deviation less than 1%.It was concluded that data obtained by the proposed method were acceptable.