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Atomic layer deposited high-k Hf_xAl_(1-x)O as an alternative gate dielectric for 4H-SiC MIS based transistors 被引量:1

Atomic layer deposited high-k Hf_xAl_(1-x)O as an alternative gate dielectric for 4H-SiC MIS based transistors
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摘要 HfxAl(1-x)O film grown by atomic layer deposition(ALD) on n-type 4H-SiC(0001) epitaxial layer has been studied.Measurements show that it has relatively high breakdown electric field of 16.4 MV/cm,high dielectric constant of 16.3 and low gate leakage current of 2.47×10-5 A/cm2 at E=5 MV/cm,which makes ALD HfxAl(1-x)O a great potential candidate gate dielectric for 4H-SiC MIS based transistors.
出处 《Science China(Technological Sciences)》 SCIE EI CAS 2012年第3期606-609,共4页 中国科学(技术科学英文版)
基金 supported by the National Natural Science Foundation of China (Grant No. 61006008) the National Defense Advance Research Project (Grant No. 513080301) the Key Specific Project in the National Sciences and Technology Program (Grant No. KJ080112501)
关键词 ALD HfxAl(1-x)O 4H-SIC MIS 4H-SiC MIS系统 原子层沉积 晶体管 介电层 击穿电场 介质常数
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