摘要
HfxAl(1-x)O film grown by atomic layer deposition(ALD) on n-type 4H-SiC(0001) epitaxial layer has been studied.Measurements show that it has relatively high breakdown electric field of 16.4 MV/cm,high dielectric constant of 16.3 and low gate leakage current of 2.47×10-5 A/cm2 at E=5 MV/cm,which makes ALD HfxAl(1-x)O a great potential candidate gate dielectric for 4H-SiC MIS based transistors.
基金
supported by the National Natural Science Foundation of China (Grant No. 61006008)
the National Defense Advance Research Project (Grant No. 513080301)
the Key Specific Project in the National Sciences and Technology Program (Grant No. KJ080112501)