中频磁控溅射制备非晶硅薄膜的工艺研究及表征

PROCESS AND CHARACTERIZATION STUDY OF AMORPHOUS SILICON THIN FILM PREPARED BY MF MAGNETRON SPUTTERING

使用中频磁控溅射方法进行正交实验,在Si基底上沉积非晶硅薄膜。利用n&k测试、拉曼光谱和XPS等方法表征,研究工作气压、电流、衬底温度等参数对制备非晶硅薄膜的沉积速率、光学特性及成分的影响。结果表明,中频磁控溅射制备非晶硅薄膜具有较大的O、C含量,但通过降低工作气压和提高溅射功率可有效降低O、C含量,得到光学特性和结构较好的非晶硅薄膜。

Amorphous silicon thin film was prepared on Si substrate by MF magnetron sputtering and its preparation process were studied by orthogonal experiment. The characterization of amorphous silicon thin film was tested by n＆k testing, Raman spectroscopy and XPS. It is found that the amorphous silicon thin films prepared by MF magnetron sputtering have a larger O, C content, however, reducing the work pressure and increasing of sputtering power can effectively reduce the O, C content and get amorphous silicon thin film with better optical properties and structure.