摘要
通过设计与悬臂梁呈不同角度的沟道,对GaAs基金属半导体场效应晶体管(MESFET)的微加速度计的输出特性进行了初步测试研究。设计了GaAs MESFET的材料层结构并采用四梁固支结构。通过表面浅工艺加工出GaAs MES-FET微加速度计。将敏感单元GaAs MESFET嵌入四梁靠近根部的位置。设计了3种不同的沟道角度,分别与悬臂梁呈45°、90°、0°,通过实验定量分析了GaAs MESFET在受到外力时,不同沟道角度的GaAs MESFET加速度计的灵敏度,且0°时灵敏度最高。最终指导传感器的优化设计,为进一步提高微加速度计的灵敏度奠定基础。
An experimental investigation was carried out with clarifying the external mechanical stress effect on GaAs metal- semiconductor field-effect transistor（MESFET） I-V characteristic curve which as the sensitive element of micro-accelerometer in different condition. This paper researched different channel directions to explore the output characteristics of the GaAs MESFET which fabricated at the root of the cantilever. It designed three channel directions which angled with the cantilever as 0° ,45° and 90°. It is shown that when the channel direction parallel to the cantilever direction, AU has the maximum value of 12. 13 mV. The sensitivity of 0° is 0. 042 1 mV/g higher than the 90°. The dynamic result indicates that the channel direction parallel to the cantilever direction is the optimized design structure.
出处
《仪表技术与传感器》
CSCD
北大核心
2012年第1期10-12,共3页
Instrument Technique and Sensor
基金
国家自然科学基金资助(50730009,50535030)
国家重点基础研究发展计划资助(2008CB317104)
