摘要
利用X射线衍射(XRD)研究中子辐照6H-SiC晶体的退火特性,发现辐照后晶体的XRD峰的半高宽(full width at half maximum,FWHM)增大,之后又随退火温度的升高,在700～1 230℃范围内呈线性规律的回复。以此规律为依据,可发展一种适合测量高温和复杂温度场温度的测温方法。采用添加了K2CO3的KOH为腐蚀剂,对辐照前、辐照后及辐照后退火的掺氮6H-SiC单晶进行位错腐蚀观察,发现经中子辐照的晶体中位错面积比随退火温度的变化趋势与FWHM随退火温度的变化趋势基本一致,由此认为经中子辐照所产生的位错可能是导致XRD峰的FWHM变化的一个重要因素。
The annealing characteristic of neutron-irradiated 6H-SiC crystals was analyzed by X-ray diffraction（XRD）.It was found that the full width at half maximum（FWHM） of the XRD peaks of the neutron-irradiated samples increased and recovered with in-creasing of the annealing temperature,showing a linear recovery law in the range of 700–1 230 ℃.Based on the law,a novel tem-perature measurement technique for the determination of high temperature and complicated temperature field was proposed.More-over,the dislocation defects for the unirradiated,irradiated and post-irradiation annealed samples were investigated by using KOH added K2CO3 as a chemical etchant.The change trends of dislocation area ratio in the irradiated sample with the annealing tempera-ture almost agreed with that of FWHM,indicating that the dislocations induced by neutron irradiation could be one of important fac-tors for the changes of FWHM due to the thermal annealing treatment.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2012年第3期436-442,共7页
Journal of The Chinese Ceramic Society
基金
中航集团(C20070716)资助项目
关键词
碳化硅晶体
中子辐照
退火
位错
silicon carbide crystal
neutron irradiation
annealing
dislocation
